Statistical model of program/verify algorithms in resistive-switching memories for in-memory neural network accelerators
A. Glukhov, V. Milo, A. Baroni, N. Lepri, C. Zambelli, P. Olivo, E. Pérez, Ch. Wenger, and D. Ielmini
Proceedings of the IEEE International Reliability Physics Symposium (IRPS), IEEE Xplore, 2022
doi.org/10.1109/IRPS48227.2022.9764497
Analytical Calculation of Inference in Memristor-based Stochastic Artificial Neural Networks
N. Bogun, E. Perez-Bosch Quesada, E. Perez, Ch. Wenger, A. Kloes, and M. Schwarz
Proceedings of the 29th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), IEEE Xplore, pp. 83-88, 2022
doi.org/10.23919/MIXDES55591.2022.9838321
End-to-end modeling of variability-aware neural networks based on resistive switching memory arrays
A. Glukhov, N. Lepri, V. Milo, A. Baroni, C. Zambelli, P. Olivo, E. Pérez, Ch. Wenger, and D. Ielmini
Proceedings of the 30th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), IEEE Xplore, 2022
doi.org/10.1109/VLSI-SoC54400.2022.9939653
Evaluating Read Disturb Effect on RRAM based AI Accelerator with Multilevel States and Input Voltages
J. Wen, A. Baroni, E. Perez, M. Ulbricht, Ch. Wenger, and M. Krstic
Proceedings of the 35th IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), IEEE Xplore, 2022
doi.org/10.1109/DFT56152.2022.9962345
A comparison of resistive switching parameters for memristive devices with HfO2 monolayers and Al2O3/HfO2 bilayers at the wafer scale
E. Pérez, D. Maldonado, M.K. Mahadevaiah, E. Pérez-Bosch Quesada, A. Cantudo, F. Jiménez-Molinos, Ch. Wenger, and J.B. Roldán
Proceedings of the 14th Spanish Conference on Electron Devices (CDE), IEEE Xplore, 2023
doi.org/10.1109/CDE58627.2023.10339417
Fast Circuit Simulation of Memristive Crossbar Arrays with Bimodal Stochastic Synaptic Weights
N. Dersch, Ch. Roemer, E. Perez, Ch. Wenger, M. Schwarz, B. Iniguez, and A. Kloes
Proceedings of the Latin American Electron Devices Conference (LAEDC), IEEE Xplore, 2024
doi.org/10.1109/LAEDC61552.2024.10555829
Comparing Short and Long-term Reliability of HfO2 and Al:HfO2 RRAM Devices
A. Baroni, E. Pérez, K. Dorai Swamy Reddy, S. Pechmann, C. Wenger, D. Ielmini, and C. Zambelli
Proceedings of the IEEE International Integrated Reliability Workshop (IIRW), IEEE Xplore, 2024
(Accepted)
Analytical Model for Parasitic Resistances of Crossbar Arrays Suitable for Open-loop Programming Schemes Reliability Analysis
T. Rizzi, T. Zanotti, N. Lepri, E. Pérez, F.M. Puglisi, D. Ielmini, and C. Zambelli
Proceedings of the IEEE International Integrated Reliability Workshop (IIRW), IEEE Xplore, 2024
(Accepted)
In-depth Characterization of Switching Dynamics in Amorphous HfO2 Memristive Arrays for the Implementation of Synaptic Updating Rules
E. Perez, M.K. Mahadevaiah, E. Perez-Bosch Quesada, and Ch. Wenger
Japanese Journal of Applied Physics, vol. 61, p. SM1007, 2022
doi.org/10.35848/1347-4065/ac6a3b
Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers
M.K. Mahadevaiah, E. Perez, M. Lisker, M.A. Schubert, E. Perez-Bosch Quesada, Ch. Wenger, and A. Mai
Electronics, vol. 11, p. 1540, 2022
doi.org/10.3390/electronics11101540
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks
A. Baroni, A. Glukhov, E. Pérez, Ch. Wenger, D. Ielmini, P. Olivo, and C. Zambelli
IEEE Transactions on Device and Materials Reliability, vol. 22, pp. 340-347, 2022
doi.org/10.1109/TDMR.2022.3182133
An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories
A. Baroni, A. Glukhov, E. Pérez, Ch. Wenger, E. Calore, S.F. Schifano, P. Olivo, D. Ielmini, and C. Zambelli
Frontiers in Neuroscience, vol. 16, p. 932270, 2022
doi.org/10.3389/fnins.2022.932270
Experimental Assessment of Multilevel RRAM-Based Vector-Matrix Multiplication Operations for In-Memory Computing
E. Perez-Bosch Quesada, M.K. Mahadevaiah, T. Rizzi, J. Wen, M. Ulbricht, M. Krstic, Ch. Wenger, and E. Perez
IEEE Transactions on Electron Devices, vol. 70, pp. 2009-2014, 2023
doi.org/10.1109/TED.2023.3244509
Efficient circuit simulation of a memristive crossbar array with synaptic weight variability
N. Dersch, E. Perez-Bosch Quesada, E. Perez, Ch. Wenger, Ch. Roemer, M. Schwarz, and A. Kloes
Solid State Electronics, vol. 209, p. 108760, 2023
doi.org/10.1016/j.sse.2023.108760
TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance
D. Maldonado, A. Cantudo, E. Perez, R. Romero-Zaliz, E. Perez-Bosch Quesada, M.K. Mahadevaiah, F. Jimenez-Molinos, Ch. Wenger, and J.B. Roldan
Frontiers in Neuroscience, vol. 17, p. 1271956, 2023
doi.org/10.3389/fnins.2023.1271956
Blooming and pruning: learning from mistakes with memristive synapses
K. Nikiruy, E. Perez, A. Baroni, K. Dorai Swamy Reddy, S. Pechmann, Ch. Wenger, and M. Ziegler
Scientific Reports, vol. 14, p. 7801, 2024
doi.org/10.1038/s41598-024-57660-4
Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis
D. Maldonado, A. Cantudo, K. Dorai Swamy Reddy, S. Pechmann, M. Uhlmann, Ch. Wenger, J.B. Roldan, and E. Perez
Materials Science in Semiconductor Processing, vol. 182, p. 108726, 2024
doi.org/10.1016/j.mssp.2024.108726
Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices
D. Maldonado, A. Baroni, S. Aldana, K. Dorai Swamy Reddy, S. Pechmann, C. Wenger, J. B. Roldán, and E. Pérez
Nanoscale, vol. 16, pp. 19021-19033, 2024
doi.org/10.1039/D4NR02975E
Optimization of Technology processes for Enhanced CMOS-integrated 1T-1R RRAM Device Performance
K. Dorai Swamy Reddy, E. Pérez, A. Baroni, M.K. Mahadevaiah, S. Marschmeyer, M. Fraschke, M. Lisker, Ch. Wenger, and A. Mai
The European Physical Journal B, (Accepted), 2024